English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | NoBL™ |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 18Mb (512K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 200 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3 ns |
| 电压 - 电源: | 3.135V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IDT71V25761YSA183BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
MT48LC32M8A2P-6A:DMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |
|
AT49F8192A-90TIRoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
IDT71V25761S183PF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
AK6416CHAsahi Kasei Microdevices / AKM Semiconductor |
IC EEPROM 16KBIT SPI 5MHZ 8MSOP |
|
W25Q80BWZPIGWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 80MHZ 8WSON |
|
N25Q032A13EF840F TRMicron Technology |
IC FLSH 32MBIT SPI 108MHZ 8VDFPN |
|
MT53B384M32D2DS-062 AUT:B TRMicron Technology |
IC DRAM 12GBIT 1600MHZ 200WFBGA |
|
AT24C02C-XPD-TRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8TSSOP |
|
MX29GL512FDXFI-12GMacronix |
IC FLSH 512MBIT PARALLEL 64LFBGA |
|
IS61DDB22M18C-250B4LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
AT27LV020A-12VIRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 32VSOP |
|
IS42S16160D-7TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
