English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | NVSRAM |
| 技术: | NVSRAM (Non-Volatile SRAM) |
| 内存大小: | 256b (16 x 16) |
| 内存接口: | SPI |
| 时钟频率: | 1 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 8-DIP (0.300", 7.62mm) |
| 供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY14B104N-ZS45XCTCypress Semiconductor |
IC NVSRAM 4MBIT PAR 44TSOP II |
|
AT27C010-12JIRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32PLCC |
|
CY7C131-55NXCTCypress Semiconductor |
IC SRAM 8KBIT PARALLEL 52PQFP |
|
AT28C64-12JIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 32PLCC |
|
NAND512W3A2BN6FSTMicroelectronics |
IC FLASH 512MBIT PARALLEL 48TSOP |
|
IS46TR16640CL-107MBLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
IS61LV12816L-10TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
AT24C01A-10TU-1.8-TRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 8TSSOP |
|
N25Q128A13EF740EMicron Technology |
IC FLASH 128MBIT SPI 8VDFPN |
|
M24C16-FMB5TGSTMicroelectronics |
IC EEPROM 16KBIT I2C 8UFDFPN |
|
IS61C1024AL-12TIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32TSOP I |
|
S34ML04G100BHA003SkyHigh Memory Limited |
IC FLASH 4G PARALLEL 63BGA |
|
AT49F1025-70JIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 44PLCC |
