English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | NVSRAM |
| 技术: | NVSRAM (Non-Volatile SRAM) |
| 内存大小: | 4Mb (512K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 70ns |
| 访问时间: | 70 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 34-PowerCap™ Module |
| 供应商设备包: | 34-PowerCap Module |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT49LV002T-90TCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32TSOP |
|
IS42S16160D-7BIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
IS42S32160A-75BISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90LFBGA |
|
AT25040AN-10SI-1.8-TRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 20MHZ 8SOIC |
|
CAT28C64BWI12Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
AS4C64M16D3A-12BINTRAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
W25Q32FVZPIG TRWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8WSON |
|
IS66WV51216DBLL-55TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 8MBIT PAR 44TSOP II |
|
IDT71V016SA20YRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
IS41LV16105D-50KLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 42SOJ |
|
W9864G6JB-6Winbond Electronics Corporation |
IC DRAM 64MBIT PARALLEL 60VFBGA |
|
MT40A256M16GE-083E AAT:BMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
AT27C020-70TCRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 32TSOP |
