类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR (ZBT) |
内存大小: | 18Mb (512K x 36) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.2 ns |
电压 - 电源: | 2.375V ~ 2.625V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71V25761YSA183BGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
MT47R128M8CF-3:HMicron Technology |
IC DRAM 1GBIT PARALLEL 60FBGA |
|
AT49LV001-90TIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
N25W064A11EF640F TRMicron Technology |
IC FLSH 64MBIT SPI 108MHZ 8VDFPN |
|
CAT28LV64WI20Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
MT47H64M8SH-25E AIT:HMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
AT28HC64B-90JARoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 32PLCC |
|
MT46V32M8TG-5B:G TRMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
M28W320HSB70ZA6F TRMicron Technology |
IC FLASH 32MBIT PARALLEL 64TFBGA |
|
709289L12PF8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
MT28F640J3BS-115 ET TRMicron Technology |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
AT25DF041A-MHF-TAdesto Technologies |
IC FLASH 4MBIT SPI 50MHZ 8UDFN |
|
MT45W8MW16BGX-701 WT TRMicron Technology |
IC PSRAM 128MBIT PAR 54VFBGA |