类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR (ZBT) |
内存大小: | 18Mb (512K x 36) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 7.5 ns |
电压 - 电源: | 2.375V ~ 2.625V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 119-BGA |
供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
MT47H32M16HR-25E:GMicron Technology |
IC DRAM 512MBIT PARALLEL 84FBGA |
![]() |
AT25160N-10SC-1.8Roving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8SOIC |
![]() |
IS46DR81280B-3DBLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 60TWBGA |
![]() |
MT46H8M32LFB5-10 IT:A TRMicron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
![]() |
THGBMHG8C4LBAU7Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 32GBIT EMMC 153WFBGA |
![]() |
N25Q128A13ESFC0F TRMicron Technology |
IC FLASH 128MBIT SPI 16SOP2 |
![]() |
IS61LP6436A-133TQISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 100TQFP |
![]() |
W25Q64DWZPIGWinbond Electronics Corporation |
IC FLASH 64MBIT SPI 104MHZ 8WSON |
![]() |
N02L63W3AT25ITSanyo Semiconductor/ON Semiconductor |
IC SRAM 2MBIT PARALLEL 44TSOP II |
![]() |
AT29C020-12PCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32DIP |
![]() |
IDT71V416S10PHI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
![]() |
AT49F512-90PCRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32DIP |
![]() |
AT25010B-MAPD-TRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 5MHZ 8UDFN |