类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR |
内存大小: | 512Mb (32M x 16) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 700 ps |
电压 - 电源: | 2.5V ~ 2.7V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 60-TFBGA |
供应商设备包: | 60-FBGA (8x12.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C144-55JXCTCypress Semiconductor |
IC SRAM 64KBIT PARALLEL 68PLCC |
|
W25Q16VSSIGWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
MT28F320J3RP-11 ET TRMicron Technology |
IC FLSH 32MBIT PARALLEL 56TSOP I |
|
MT44K32M18RB-107E:AMicron Technology |
IC DRAM 576MBIT PARALLEL 168BGA |
|
PC28F256P30B85AMicron Technology |
IC FLASH 256MBIT PAR 64EASYBGA |
|
AS4C128M8D3-12BANAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 78FBGA |
|
MT29C1G56MAACAVAMD-6 ITMicron Technology |
IC FLASH RAM 1GBIT PAR 130VFBGA |
|
AS6C4016A-45BINTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 48VFBGA |
|
AT27BV020-15VCRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 32VSOP |
|
CAT28F001L-12TSanyo Semiconductor/ON Semiconductor |
IC FLASH 1MBIT PARALLEL 32DIP |
|
7008L55PF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
M25PE20-VMP6TG TRMicron Technology |
IC FLASH 2MBIT SPI 75MHZ 8VDFPN |
|
AT28LV010-20TIRoving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32TSOP |