English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 18Mb (512K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 167 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3.4 ns |
| 电压 - 电源: | 3.135V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-LBGA |
| 供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C1355B-100ACCypress Semiconductor |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
AT27C512R-55PIRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28DIP |
|
IS46DR81280B-3DBLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 60TWBGA |
|
IDT71T75602S166PFRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
MT47H128M8SH-25E AAT:MMicron Technology |
IC DRAM 1GBIT PARALLEL 60FBGA |
|
IDT71016S15YIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
MT29F2G08ABAEAWP-E:EMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
AT28C256F-15JCRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 32PLCC |
|
W632GU8KB15I TRWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78WBGA |
|
IDT71V416VS15PH8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
IS42S16100E-7TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
|
IDT71V25761SA183BQI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
70V9099L9PFRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
