类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 256Mb (16M x 16) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 5.4 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-VFBGA |
供应商设备包: | 54-VFBGA (8x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
IS62WV1288DBLL-45QLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32SOP |
![]() |
AT27C080-12JIRoving Networks / Microchip Technology |
IC EPROM 8MBIT PARALLEL 32PLCC |
![]() |
MT47H64M8B6-25E:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
![]() |
IDT71V25761SA200BQ8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
![]() |
S25FL164K0XMFB003Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 16SOIC |
![]() |
IS42S16400D-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 60MINIBGA |
![]() |
24FC512T-I/MSRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 1MHZ 8MSOP |
![]() |
MT53B384M32D2DS-062 AUT:BMicron Technology |
IC DRAM 12GBIT 1600MHZ 200WFBGA |
![]() |
IS66WVC2M16ALL-7010BLIISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 32MBIT PARALLEL 54VFBGA |
![]() |
AT27C010L-90PCRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32DIP |
![]() |
AT28C010E-12JU-235Roving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32PLCC |
![]() |
IDT71V432S10PF8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
![]() |
S29GL256N11FFI023Cypress Semiconductor |
IC FLASH MEMORY NOR PARALLEL |