类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | DRAM |
内存大小: | 288Mb (16M x 18) |
内存接口: | Parallel |
时钟频率: | 300 MHz |
写周期时间 - 字,页: | - |
访问时间: | 20 ns |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 144-TFBGA |
供应商设备包: | 144-FCBGA (11x18.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
LHF00L13Sharp Microelectronics |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
7006L20PF8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 64TQFP |
|
W25Q32BVZPJPWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8WSON |
|
S34ML04G200BHB003SkyHigh Memory Limited |
IC FLASH 2G PARALLEL 63BGA |
|
709279L15PF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
AT27C010-70TURoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32TSOP |
|
M29F400BT90N1Micron Technology |
IC FLASH 4MBIT PARALLEL 48TSOP |
|
W74M12JVZPIQ TRWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
R1EX24128BSAS0I#K0Renesas Electronics America |
IC EEPROM 128KBIT I2C 8SOP |
|
W29GL064CL7BWinbond Electronics Corporation |
IC FLASH 64MBIT PARALLEL 64LFBGA |
|
AT24C164-10SC-1.8Roving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8SOIC |
|
W25Q16JWUXIQWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8USON |
|
93AA46X/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |