English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | DRAM |
| 内存大小: | 288Mb (16M x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 400 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 20 ns |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 144-TFBGA |
| 供应商设备包: | 144-FCBGA (11x18.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
M93C86-MN6TSTMicroelectronics |
IC EEPROM 16KBIT SPI 2MHZ 8SO |
|
STK22C48-NF25TRCypress Semiconductor |
IC NVSRAM 16KBIT PARALLEL 28SOIC |
|
AT49F001-55PIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32DIP |
|
BR93L76-WROHM Semiconductor |
IC EEPROM 8KBIT SPI 2MHZ 8DIP |
|
CY7C1021B-12VXCTCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
IS49NLC36800-25BISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 288MBIT PAR 144FCBGA |
|
IDT71V67903S75PFI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
AT25080BY6-YH-TRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 8MINI MAP |
|
W25Q64BVSSIGWinbond Electronics Corporation |
IC FLASH 64MBIT SPI 80MHZ 8SOIC |
|
IDT71V3557SA75BQGI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
MT29E1T208ECHBBJ4-3ES:B TRMicron Technology |
IC FLASH 1.125T PARALLEL 132VBGA |
|
AT49F001-90JIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
MT46H8M32LFB5-75:A TRMicron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
