类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (256K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 15ns |
访问时间: | 15 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-TFBGA |
供应商设备包: | 48-CABGA (9x9) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT25160AN-10SI-1.8Roving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 20MHZ 8SOIC |
|
70V25S55JRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PLCC |
|
AS4C32M16SA-7TINAlliance Memory, Inc. |
IC DRAM 512MBIT PAR 54TSOP II |
|
AT25128T2-10TI-2.7Roving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 20TSSOP |
|
MT53B256M32D1DS-062 AAT:CMicron Technology |
IC DRAM 8GBIT 1600MHZ 200WFBGA |
|
IS61NLF102418-7.5B3I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
IDT71T75702S75BG8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
W25X32VSSIG T&RWinbond Electronics Corporation |
IC FLASH 32MBIT SPI 75MHZ 8SOIC |
|
BR24G128-3ROHM Semiconductor |
IC EEPROM 128KBIT I2C 8DIP |
|
S25FL164K0XNFI010Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
MT46V64M4TG-75:G TRMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
IS61LV25616AL-10K-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
AT27C516-55VCRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 40VSOP |