类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 12ns |
访问时间: | 12 ns |
电压 - 电源: | 3.15V ~ 3.45V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 36-TFBGA |
供应商设备包: | 36-miniBGA (8x10) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT48LC8M8A2P-6A:J TRMicron Technology |
IC DRAM 64MBIT PAR 54TSOP II |
|
MT29F768G08EECBBJ4-37:BMicron Technology |
IC FLASH 768GBIT PAR 132VBGA |
|
IS62WV6416DBLL-45TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
AT25DF041A-MH-TAdesto Technologies |
IC FLASH 4MBIT SPI 70MHZ 8UDFN |
|
AT24HC02BN-SH-BRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8SOIC |
|
MT29F128G08CECABH1-12ITZ:A TRMicron Technology |
IC FLASH 128GBIT PAR 100VBGA |
|
AS4C256M16D3A-12BCNAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
NM93C06LENSanyo Semiconductor/ON Semiconductor |
IC EEPROM 256B SPI 250KHZ 8DIP |
|
MT28F800B5SG-8 BETMicron Technology |
IC FLASH 8MBIT PARALLEL 44SOP |
|
AT24C16A-10PU-1.8Roving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 400KHZ 8DIP |
|
AT49F001ANT-55JURoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
MT47H32M16CC-37E L:BMicron Technology |
IC DRAM 512MBIT PARALLEL 84FBGA |
|
TE28F128P30B85AMicron Technology |
IC FLASH 128MBIT PARALLEL 56TSOP |