类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 64Kb (8K x 8) |
内存接口: | I²C |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 450 ns |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-UFDFN Exposed Pad |
供应商设备包: | 8-UFDFPN (2x3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
GD5F4GQ4RBYIGRGigaDevice |
IC FLASH 4GBIT SPI/QUAD 8WSON |
|
R1RW0408DGE-2PI#B1Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
R1EX24064ATAS0I#S0Renesas Electronics America |
IC EEPROM 64KBIT I2C 400KHZ 8SOP |
|
CY62128EV30LL-55SXECypress Semiconductor |
IC SRAM 1MBIT PARALLEL 32SOIC |
|
AT45DB021D-SSH-BRoving Networks / Microchip Technology |
IC FLASH 2MBIT SPI 66MHZ 8SOIC |
|
IDT70P3337S250RMRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 576FCBGA |
|
MT53B512M32D2DS-062 AAT:CMicron Technology |
IC DRAM 16GBIT 1600MHZ 200WFBGA |
|
MT28EW128ABA1HPC-1SITMicron Technology |
IC FLASH 128MBIT PARALLEL 64LBGA |
|
M93S56-MN6STMicroelectronics |
IC EEPROM 2KBIT SPI 2MHZ 8SO |
|
AT45DB161-JCRoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI 13MHZ 32PLCC |
|
AS4C256M8D3A-12BINAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
70914S12PFRenesas Electronics America |
IC SRAM 36KBIT PARALLEL 80TQFP |
|
AT27C080-90RIRoving Networks / Microchip Technology |
IC EPROM 8MBIT PARALLEL 32SOIC |