English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | SPI |
| 时钟频率: | 50 MHz |
| 写周期时间 - 字，页: | 50µs |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S29CD016J0PFFM113Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 80FBGA |
|
RMWV6416AGSD-5S2#HA0Renesas Electronics America |
IC SRAM 64MBIT PAR 52TSOP II |
|
S29WS512PABBFW000Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 84FBGA |
|
MT47H64M16HR-25E L:G TRMicron Technology |
IC DRAM 1GBIT PARALLEL 84FBGA |
|
R1LV0816ABG-7SI#S0Renesas Electronics America |
IC SRAM 8MBIT PARALLEL 48FBGA |
|
IS43TR85120A-125KBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 78TWBGA |
|
MT48H4M16LFB4-8 IT TRMicron Technology |
IC DRAM 64MBIT PARALLEL 54VFBGA |
|
AT29C512-15JIRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32PLCC |
|
IS41LV16105B-50TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 44TSOP II |
|
IS42S32400B-7T-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 86TSOP II |
|
IS62WV12816DBLL-45TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
IS49NLC18320-33BISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 144FCBGA |
|
S34ML01G100BHA000SkyHigh Memory Limited |
IC FLASH 1G PARALLEL 63BGA |
