类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EPROM |
技术: | EPROM - OTP |
内存大小: | 512Kb (64K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 150 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TC) |
安装类型: | Surface Mount |
包/箱: | 32-LCC (J-Lead) |
供应商设备包: | 32-PLCC (13.97x11.43) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT27C4096-70PIRoving Networks / Microchip Technology |
IC EPROM 4MBIT PARALLEL 40DIP |
|
M27C1001-45XF1STMicroelectronics |
IC EPROM 1MBIT PARALLEL 32CDIP |
|
IDT71V35761SA166BQIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
AT25128A-10TI-1.8Roving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 8TSSOP |
|
70V9089L15PF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
AT28HC256-70JCRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 32PLCC |
|
MT53B128M32D1NP-062 AIT:A TRMicron Technology |
IC DRAM 4GBIT 1600MHZ 200WFBGA |
|
70V27L35PF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
MT48H8M16LFB4-6 IT:KMicron Technology |
IC DRAM 128MBIT PARALLEL 54VFBGA |
|
CAT93C46BXI-T2Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 1KBIT SPI 4MHZ 8SOIC |
|
SST39SF040-45-4I-NHE-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32PLCC |
|
EDB1332BDPC-1D-F-R TRMicron Technology |
IC DRAM 1GBIT PARALLEL 134VFBGA |
|
IDT71V416YL15PH8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |