English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM |
| 内存大小: | 4Kb (256 x 16 pages) |
| 内存接口: | 1-Wire® |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | 2 µs |
| 电压 - 电源: | - |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 6-LSOJ (0.148", 3.76mm Width) |
| 供应商设备包: | 6-TSOC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT41K1G8RKB-107:NMicron Technology |
IC DRAM 8GBIT PARALLEL 78FBGA |
|
IS61VF51236A-7.5B3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
NM27C256V100Sanyo Semiconductor/ON Semiconductor |
IC EPROM 256KBIT PARALLEL 32PLCC |
|
70V9279L7PRF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 128TQFP |
|
IS42S86400B-7TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
IS42S32160D-6BIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
DS3065W-100#Maxim Integrated |
IC NVSRAM 8MBIT PARALLEL 256BGA |
|
MT40A1G4RH-075E:BMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
CY14B101K-SP35XCTCypress Semiconductor |
IC NVSRAM 1MBIT PARALLEL 48SSOP |
|
IS64WV51216BLL-10MA3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 48MINIBGA |
|
S25FL064P0XNFI001MCypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
W632GU8MB11IWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
M28W640FCT70N6EMicron Technology |
IC FLASH 64MBIT PARALLEL 48TSOP |
