类型 | 描述 |
---|---|
系列: | NoBL™ |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 9Mb (256K x 36) |
内存接口: | Parallel |
时钟频率: | 100 MHz |
写周期时间 - 字,页: | - |
访问时间: | 7.5 ns |
电压 - 电源: | 3.135V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS61LPS25618A-200TQIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
MT52L256M32D1PF-107 WT ES:B TRMicron Technology |
IC DRAM 8GBIT 933MHZ 178FBGA |
|
M27C256B-45XF1STMicroelectronics |
IC EPROM 256KBIT PARALLEL 28CDIP |
|
S-93L46AD0I-T8T1GABLIC U.S.A. Inc. |
IC EEPROM 1KBIT SPI 2MHZ 8TSSOP |
|
AT49BV802A-70TURoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
MT48H16M32L2F5-10 TRMicron Technology |
IC DRAM 512MBIT PARALLEL 90VFBGA |
|
AT24C128BY6-YH-TRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8MINI MAP |
|
W25Q16CVZPJGWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8WSON |
|
JS28F640P30BF75AMicron Technology |
IC FLASH 64MBIT PARALLEL 56TSOP |
|
TE28F256J3D95B TRMicron Technology |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
M45PE40-VMP6GMicron Technology |
IC FLASH 4MBIT SPI 75MHZ 8VDFPN |
|
IS43LD32320A-3BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 134TFBGA |
|
IS42VM32400E-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |