类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 45ns |
访问时间: | 45 ns |
电压 - 电源: | 2.3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 32-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 32-TSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
IS43LR16800F-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 60TFBGA |
![]() |
IDT71V432S7PFIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
![]() |
PCF85102C-2T/03:11NXP Semiconductors |
IC EEPROM 2KBIT I2C 100KHZ 8SO |
![]() |
IS61VPD51236A-250B3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165PBGA |
![]() |
AT49F001T-55TCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
![]() |
IS43DR82560B-25EBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 60TWBGA |
![]() |
7142LA20J8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
![]() |
BR93L66RFVT-WE2ROHM Semiconductor |
IC EEPROM 4KBIT SPI 2MHZ 8TSSOPB |
![]() |
W632GG6NB09JWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
![]() |
CAT28F512G90Sanyo Semiconductor/ON Semiconductor |
IC FLASH 512KBIT PARALLEL 32PLCC |
![]() |
AT24C32A-10TI-2.7Roving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8TSSOP |
![]() |
W25Q64JVSFJMWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 16SOIC |
![]() |
MT29F4G16ABBDAH4-AIT:DMicron Technology |
IC FLASH 4GBIT PARALLEL 48TSOP I |