English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 32Kb (4K x 8) |
| 内存接口: | SPI |
| 时钟频率: | 5 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 2.5V ~ 5.5V |
| 工作温度: | -40°C ~ 125°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS42S16160B-6T-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
R1EX25002ATA00I#S0Renesas Electronics America |
IC EEPROM 2KBIT SPI 5MHZ 8TSSOP |
|
70V9389L6PRF8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 128TQFP |
|
NM27C010N150Sanyo Semiconductor/ON Semiconductor |
IC EPROM 1MBIT PARALLEL 32DIP |
|
IS49NLC18320-33BIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 144FCBGA |
|
MT48V8M32LFB5-10 TRMicron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
70V261S55PFRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
IS43LR32200B-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|
AT24C32-10PC-2.5Roving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 400KHZ 8DIP |
|
MT29F128G08CBCCBH6-6R:C TRMicron Technology |
IC FLASH 128GBIT PAR 152VBGA |
|
AT49F001NT-55JCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
AT25SF321-SSHD-TAdesto Technologies |
IC FLASH 32MBIT SPI 104MHZ 8SOIC |
|
S25FL116K0XBHIS23Cypress Semiconductor |
IC FLASH 16MBIT SPI/QUAD 24BGA |
