类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3L |
内存大小: | 4Gb (512M x 8) |
内存接口: | Parallel |
时钟频率: | 800 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 20 ns |
电压 - 电源: | 1.283V ~ 1.45V |
工作温度: | -40°C ~ 105°C (TC) |
安装类型: | Surface Mount |
包/箱: | 78-TFBGA |
供应商设备包: | 78-TWBGA (8x10.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS61LF102436A-7.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 100TQFP |
|
M48Z02-200PC1STMicroelectronics |
IC NVSRAM 16KBIT PAR 24PCDIP |
|
24LC014T-E/OTRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C SOT23-6 |
|
AT29C512-70JU-TRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32PLCC |
|
IDT71T016SA12PHGRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
S29GL256N11FAI022Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
AT28HC64B-90JCRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 32PLCC |
|
MT29F2G08ABBEAHC:EMicron Technology |
IC FLASH 2GBIT PARALLEL 63VFBGA |
|
MT46V32M16BN-75:C TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
S25FL116K0XNFIQ10Cypress Semiconductor |
IC FLASH 16MBIT SPI/QUAD 8WSON |
|
IDT71V3558SA200BQGRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
S29GL256P10FFIS40Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
MT40A512M8HX-093E:AMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |