类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR3 |
内存大小: | 16Gb (256M x 64) |
内存接口: | - |
时钟频率: | 800 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.2V |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT53E768M32D4DT-046 AUT:E TRMicron Technology |
LPDDR4 24G 1.5GX16 FBGA QDP |
|
MT53D256M64D4NY-046 XT:BMicron Technology |
IC DRAM 16GBIT 2133MHZ |
|
MD27C040-17/BRochester Electronics |
512K X 8 UV EPROM |
|
7801504FARochester Electronics |
STANDARD SRAM, 16X4, 65NS |
|
MT53D4DBNW-DC TRMicron Technology |
IC DRAM LPDDR4 SMD |
|
CY62168GN30-45BVXITCypress Semiconductor |
MICROPOWER SRAMS |
|
CDP68HC68T1M96S2357Rochester Electronics |
SERIAL REAL-TIME CLOCK WITH RAM |
|
SM661PX8-ACSSilicon Motion |
FERRI-EMMC BGA 153-B EMMC 4.5 ML |
|
MT53E1G64D4SQ-046 WT:AMicron Technology |
IC DRAM LPDDR4 WFBGA |
|
MT53D1024M32D4DT-053 AAT:DMicron Technology |
IC DRAM 32GBIT 1866MHZ 200VFBGA |
|
70T651S12BFGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 208CABGA |
|
CY7C199-25BVIRochester Electronics |
DUAL PORT RAM |
|
7014S12JG8Renesas Electronics America |
IC SRAM 36KBIT PARALLEL 52PLCC |