类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 256Kb (16K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 35ns |
访问时间: | 35 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -55°C ~ 125°C (TA) |
安装类型: | Through Hole |
包/箱: | 84-BPGA |
供应商设备包: | 84-PGA (27.94x27.94) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M29F400FB55M3F2Alliance Memory, Inc. |
IC FLASH 4MBIT 44SO |
|
CY62256NLL-70PXCKPRochester Electronics |
ASYNC RAM |
|
MT29F2T08EMHBFJ4-R:B TRMicron Technology |
IC FLASH 2TB PARALLEL 132VBGA |
|
S70FL01GSDSBHBC13Cypress Semiconductor |
IC FLSH 1GBIT SPI/QUAD I/O 24BGA |
|
CY62187EV18LL-70BAXITCypress Semiconductor |
MICROPOWER SRAMS |
|
CY10E484-5KCQRochester Electronics |
STANDARD SRAM, 4KX4, 4NS, ECL10K |
|
CP7203CTTRochester Electronics |
USB |
|
CY7C1370DV25-200CKJRochester Electronics |
SYNC RAM |
|
S34ML02G100BHV000ZRochester Electronics |
2 GB, 3 V, SLC NAND FLASH |
|
7142LA25JGI8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
GD25LQ128DVIGRGigaDevice |
IC FLASH 128MBIT SPI/QUAD 8VSOP |
|
CG7291KGARochester Electronics |
SPECIAL |
|
IS62WV51216EFBLL-45TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 44TSOP II |