类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 128Kb (16K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 25ns |
访问时间: | 25 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -55°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 68-Flatpack |
供应商设备包: | 68-FPACK |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
R1WV6416RSD-5SR#B0Rochester Electronics |
STANDARD SRAM, 4MX16, 55NS |
|
CG7035AMRochester Electronics |
SPECIAL |
|
CG7451AFRochester Electronics |
SPECIAL |
|
MT29F2G01ABAGDM79A3WC1LMicron Technology |
IC FLASH NAND 2G 2GX1 DIE |
|
CG6244AATRochester Electronics |
SPECIAL |
|
SMJ68CE16L-55JDMRochester Electronics |
STANDARD SRAM, 2KX8, 55NS, CMOS |
|
M10162040054X0PSARRenesas Electronics America |
IC RAM 16MBIT SPI 54MHZ 8SOIC |
|
5962-8700205ZARenesas Electronics America |
IC SRAM 16KBIT PARALLEL SB48 |
|
MD27128A-20/BRochester Electronics |
MD27128A-20/B |
|
CY62177G30-55BAXICypress Semiconductor |
IC SRAM 32MBIT PARALLEL 48FBGA |
|
R1EX24256ASA00I#S0Rochester Electronics |
EEPROM, 32KX8, SERIAL |
|
MT29F4G16ABBFAH4-AAT:F TRMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
5962-8866205XARenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28CDIP |