类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | RAM |
技术: | MRAM (Magnetoresistive RAM) |
内存大小: | 4Mb (1M x 4) |
内存接口: | SPI |
时钟频率: | 54 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C |
安装类型: | Surface Mount |
包/箱: | 8-WDFN Exposed Pad |
供应商设备包: | 8-DFN (5x6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BR24H256FVM-5ACTRROHM Semiconductor |
125 OPERATION IC BUS EEPROM FOR |
|
MT46V32M16P-5B IT:J TRMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
S29GL01GS12DHIV20ARochester Electronics |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
MT40A512M16LY-062E AT:EMicron Technology |
IC FLASH 8GBIT 1.6GHZ 96FBGA |
|
MX30UF2G16AC-XQIMacronix |
IC FLASH 2GBIT PARALLEL 48VFBGA |
|
CAT24C32ZGIRochester Electronics |
IC EEPROM 32KBIT I2C 1MHZ 8MSOP |
|
AT25SL321-SSHE-TAdesto Technologies |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
PAL16R6AJ/883Rochester Electronics |
ELECTRICALLY ERASABLE PAL DEVIC |
|
MTFC16GAKAEDQ-AATMicron Technology |
IC FLASH 128GBIT MMC 100LBGA |
|
CG6601AARochester Electronics |
SPECIAL |
|
CY7C1347B-133ACTRochester Electronics |
CACHE SRAM, 128KX36, 4NS |
|
S25FS512SFABHB213Cypress Semiconductor |
IC 512 MB FLASH MEMORY |
|
7143SA70GBRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PGA |