类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Not For New Designs |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR |
内存大小: | 1Gb (64M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S29GL01GT11TFV033Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
MT44K64M18RB-083F:AMicron Technology |
IC RLDRAM 1.125GBIT PAR 168BGA |
|
CG7918AARochester Electronics |
SPECIAL |
|
7MPV4145S15MRochester Electronics |
256K X 32 3.3V SRAM MODULE |
|
MT35XU256ABA1G12-0AUT TRMicron Technology |
IC FLASH 256MBIT XCCELA 24TPBGA |
|
CP5788EMRochester Electronics |
8 BIT NEURON NETWORK PROCESSOR |
|
FM93C46MT8Rochester Electronics |
EEPROM, 64X16, SERIAL, CMOS |
|
70V3599S133BCGIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
CDAC374M96Rochester Electronics |
CDAC374M96 |
|
CY100E474L-7JCQRochester Electronics |
1024 X 4 ECL SRAM |
|
CAT25C16SE-26628Rochester Electronics |
IC EEPROM 16KBIT SPI 10MHZ 8SOIC |
|
S29PL032J55BFI070Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 48FBGA |
|
MT51J256M32HF-80:B TRMicron Technology |
IC RAM 8GBIT PAR 2GHZ 170FBGA |