类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Kb (512 x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 15ms |
访问时间: | 900 ns |
电压 - 电源: | 2.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
8403609JARenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24CDIP |
|
LE25FU206MA-TLM-HRochester Electronics |
2M BIT (256KX8) SERIAL FLASH MEM |
|
R1LV0408CSB-5UI#D0Rochester Electronics |
STANDARD SRAM, 512KX8 |
|
CAT24C02VP2GIRochester Electronics |
IC EEPROM 2KBIT I2C 400KHZ 8TDFN |
|
FM24C16B-G1Rochester Electronics |
IC FRAM 16KBIT I2C 1MHZ 8SOIC |
|
PY7C1049CV33-15ZCRochester Electronics |
4-MBIT (512K X 8) SRAM |
|
R1EX24128BSAS0I#S1Rochester Electronics |
EEPROM, 16KX8, SERIAL |
|
CY62177DV30LL-70BAIRochester Electronics |
ASYNC RAM |
|
MT53E4D1BSQ-DCMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
|
CY7C0833V-100BBIMGRochester Electronics |
DUAL PORT RAM |
|
AS7C31026C-12BINTRAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 48BGA |
|
CG7095AMTRochester Electronics |
SPECIAL |
|
CG6753ATRochester Electronics |
SPECIAL |