类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Not For New Designs |
内存类型: | Non-Volatile |
内存格式: | FLASH, RAM |
技术: | FLASH - NAND, DRAM - LPDDR2 |
内存大小: | 4Gb (256M x 16)(NAND), 4G (128M x 32)(LPDDR2) |
内存接口: | Parallel |
时钟频率: | 533 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.8V |
工作温度: | -25°C ~ 85°C (TA) |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
93L425ADM/BRochester Electronics |
1K X 1 TTL SRAM |
![]() |
CG7261ATRochester Electronics |
SPECIAL |
![]() |
MT41K128M16JT-125:K TRMicron Technology |
IC DRAM 2GBIT PARALLEL 96FBGA |
![]() |
29705APCBRochester Electronics |
SRAM |
![]() |
8403610JARenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24CDIP |
![]() |
MT53D1G64D8NZ-046 WT:E TRMicron Technology |
IC DRAM 64GBIT 2133MHZ 376WFBGA |
![]() |
CG7677AARochester Electronics |
SPECIAL |
![]() |
FM93C56LMT8XRochester Electronics |
EEPROM, 128X16, SERIAL, CMOS |
![]() |
MT29F2T08EMHBFJ4-T:B TRMicron Technology |
IC FLASH 2TB PARALLEL 132VBGA |
![]() |
7024S35FBRenesas Electronics America |
IC SRAM 64KBIT PAR 84FLATPAK |
![]() |
M5M5256DVP-70XL#SERochester Electronics |
STANDARD SRAM, 32KX8 |
![]() |
AM29C334-2/BZCRochester Electronics |
MULTI-PORT SRAM, 64X8, 40NS |
![]() |
MT52L256M64D2FT-107 WT:B TRMicron Technology |
LPDDR3 16G 256MX64 WFBGA |