English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 128Kb (8K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 55ns |
| 访问时间: | 55 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -55°C ~ 125°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 84-BPGA |
| 供应商设备包: | 84-PGA (27.94x27.94) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AS4C512M8D3LC-12BINAlliance Memory, Inc. |
512M X 8, 1.35V, 800MHZ, DDR3-16 |
|
|
IS66WV51216EALL-70BLIISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 8MBIT PARALLEL 48TFBGA |
|
|
AT25XE321D-UUN-TAdesto Technologies |
IC FLASH 32MBIT SPI/QUAD 12WLCSP |
|
|
FM25C040ULMT8Rochester Electronics |
EEPROM, 512X8, SERIAL, CMOS |
|
|
CAT24C04LGIRochester Electronics |
IC EEPROM 4KBIT I2C 400KHZ 8DIP |
|
|
CG8406AARochester Electronics |
IC SRAM |
|
|
7025S25GRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PGA |
|
|
7027S25GRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 108PGA |
|
|
MD28F020-90Rochester Electronics |
FLASH, 256KX8, 90NS, CDIP32 |
|
|
MT25TL512BBA8E12-0AATMicron Technology |
IC FLASH 512MBIT SPI 24TPBGA |
|
|
MT53D384M64D4KA-046 XT:EMicron Technology |
IC DRAM 24GBIT 2133MHZ FBGA |
|
|
CG6306BFRochester Electronics |
SPECIAL |
|
|
5962-9161708MXARenesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PGA |
