English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 32Kb (2K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 90ns |
| 访问时间: | 90 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -55°C ~ 125°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 68-BPGA |
| 供应商设备包: | 68-PGA (29.46x29.46) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT40A512M8SA-062E IT:F TRMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
|
MX25V1006EMI-13GMacronix |
IC FLSH 1MBIT SPI/DUAL I/O 75MHZ |
|
|
S34ML01G200TFI900ZRochester Electronics |
1 GB, 3 V, SLC NAND FLASH |
|
|
MT62F1536M64D8CH-036 WT:AMicron Technology |
IC FLASH 96GBIT 2.75GHZ |
|
|
R1EX24032ATAS0A#S0Rochester Electronics |
IC EEPROM 32KBIT I2C 8TSSOP |
|
|
PF38F1020W0YBQ0Rochester Electronics |
MEMORY CIRCUIT, 2MX16 PBGA88 |
|
|
NM93C66ALEMT8XRochester Electronics |
EEPROM, 256X16, SERIAL, CMOS |
|
|
MT52L256M64D2PP-107 WT:B TRMicron Technology |
IC DRAM 16GBIT 933MHZ 253VFBGA |
|
|
CG7445AFRochester Electronics |
SPECIAL |
|
|
71256L35TDBRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28CDIP |
|
|
CAT24FC64YI-TE13Rochester Electronics |
IC EEPROM 64KBIT I2C 1MHZ 8TSSOP |
|
|
7133LA35GBRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PGA |
|
|
MX25U3235FZCI-10GMacronix |
IC FLASH 32MBIT SPI/QUAD 104MHZ |
