类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 64Kb (8K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 20ns |
访问时间: | 20 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Through Hole |
包/箱: | 68-BPGA |
供应商设备包: | 68-PGA (29.46x29.46) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MB85R4M2TFN-G-JAE2Fujitsu Electronics America, Inc. |
IC FRAM 4MBIT 44TSOP |
|
70T633S10BCGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
MT48LC16M16A2B4-6AAAT:GFlip Electronics |
IC DRAM 256MBIT PARALLEL 54VFBGA |
|
MT29F256G08AKCBBH7-6IT:B TRMicron Technology |
IC FLASH 256GBIT PAR 152TBGA |
|
CG6833AMTRochester Electronics |
SPECIAL |
|
MTFC64GAJAECE-AIT TRMicron Technology |
IC FLASH 512GBIT MMC 169LFBGA |
|
CG6852AMRochester Electronics |
SPECIAL |
|
AT49BV640D-70CIRochester Electronics |
AT49BV640D-70CI |
|
S25FL256LDPBHI020YRochester Electronics |
SERIAL FLASH, 256MB |
|
M30162040108X0PWAYRenesas Electronics America |
IC RAM 16MBIT 108MHZ 8DFN |
|
MT25QU01GBBB8ESF-0AATMicron Technology |
IC FLASH 1GBIT SPI 133MHZ 16SOP2 |
|
FM93CS46LEMT8Rochester Electronics |
EEPROM, 64X16, SERIAL, CMOS |
|
M30042040054X0PSARRenesas Electronics America |
IC RAM 4MBIT 54MHZ 8SOIC |