English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Synchronous |
| 内存大小: | 32Kb (2K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 70ns |
| 访问时间: | 70 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -55°C ~ 125°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 68-BPGA |
| 供应商设备包: | 68-PGA (29.46x29.46) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CMM5114ADR2276Rochester Electronics |
1K X 4 BIT STATIC RAM, PLEASE CO |
|
|
MT40A8G4VNE-062H:B TRMicron Technology |
IC FLASH 32GBIT 1.6GHZ |
|
|
7025L55GRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PGA |
|
|
MT29F1T08EEHBFJ4-R:B TRMicron Technology |
IC FLASH 1TB PARALLEL 132VBGA |
|
|
AT24C02BN-SP25Y6-TRochester Electronics |
IC EEPROM 2KBIT I2C 1MHZ |
|
|
CAV24M01YE-GRochester Electronics |
EEPROM, 128KX8, SERIAL, CMOS |
|
|
MT53E2D1BCY-DC TRMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
|
|
MR27C256-20/BRochester Electronics |
32 X 8 CMOS EPROM |
|
|
MT29F2G08ABAGAH4-AATES:GMicron Technology |
IC FLASH 2GBIT PARALLEL 63VFBGA |
|
|
7130SA55L48BRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 48LCC |
|
|
MT53D1024M32D4DT-053 AAT:D TRMicron Technology |
IC DRAM 32GBIT 1866MHZ 200VFBGA |
|
|
MR25H128PDFREverspin Technologies, Inc. |
IC RAM 128K SPI 40MHZ 8DFN |
|
|
S99GL256P90TFIR10Flip Electronics |
INTEGRATED CIRCUIT |
