English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100 |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 4Mb (512K x 8, 256K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 55ns |
| 访问时间: | 55 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 125°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
| 供应商设备包: | 48-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CG6039AARochester Electronics |
SPECIAL |
|
|
IS43DR16320E-3DBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 84TWBGA |
|
|
7025L70GBRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PGA |
|
|
CG7765AARochester Electronics |
SPECIAL |
|
|
AT25512-W-11Rochester Electronics |
AT25512 - EEPROM, 64KX8, SERIAL |
|
|
S25FL064P0XNFV001JRochester Electronics |
SERIAL FLASH, 64MB |
|
|
CAT93C66SE-26650Rochester Electronics |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
|
MT51K128M32HF-60 N:BMicron Technology |
IC RAM 4GBIT PARALLEL 170FBGA |
|
|
CAT25C08LGI-26736Rochester Electronics |
IC EEPROM 8KBIT SPI 10MHZ 8DIP |
|
|
S29WS256P0PBFW000ACypress Semiconductor |
IC MEM NOR 84FBGA |
|
|
CY7C1399B-20ZCTRochester Electronics |
SRAM 256K-BIT 32K X 8 20NS |
|
|
7134LA55L48BRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 48LCC |
|
|
MT53B256M64D2PX-062 XT:C TRMicron Technology |
IC DRAM 16GBIT 1600MHZ FBGA |
