类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | - |
内存格式: | - |
技术: | - |
内存大小: | - |
内存接口: | - |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CG5124AFTRochester Electronics |
SPECIAL |
|
MT53D1024M32D4DT-046 WT:DMicron Technology |
IC DRAM 32GBIT 2.133GHZ 200VFBGA |
|
RM24C64C-LCSI-TAdesto Technologies |
IC CBRAM 64KBIT I2C 1MHZ 6WLCSP |
|
CY7C1463AV33-133CKJRochester Electronics |
SYNC RAM |
|
MT29F512G08EBHAFJ4-3R:A TRMicron Technology |
IC FLSH 512GBIT PARALLEL 132VBGA |
|
CY7C199CN-15PCRochester Electronics |
STANDARD SRAM, 32KX8, 15NS |
|
S29WS256PABBFW000ARochester Electronics |
READ/WRITE FLASH, 256MB |
|
CY7C1399BN-15VXAKJRochester Electronics |
ASYNC RAM |
|
CY10E422L-7JCQRochester Electronics |
STANDARD SRAM, 256X4, 7NS, |
|
GS88236BB-200IFlip Electronics |
IC SRAM 9MBIT PARALLEL 119FPBGA |
|
MT53E768M64D4SQ-046 WT:AMicron Technology |
IC DRAM LPDDR4 FBGA |
|
S71WS256PC0HH3YR0Cypress Semiconductor |
IC FLASH RAM 256MBIT PAR 84FBGA |
|
S29GL01GT11TFB023Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 56TSOP |