类型 | 描述 |
---|---|
系列: | NoBL™ |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 9Mb (512K x 18) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.5 ns |
电压 - 电源: | 2.375V ~ 2.625V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
CG6728AMTRochester Electronics |
SPECIAL |
![]() |
7143LA55GBRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PGA |
![]() |
CG7645AARochester Electronics |
SPECIAL |
![]() |
CY7C1370S-200AXCKJRochester Electronics |
SYNC RAM |
![]() |
MT29F1G16ABBFAH4-IT:F TRMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
![]() |
CG7420AFRochester Electronics |
SPECIAL |
![]() |
AS6C8016B-55BINAlliance Memory, Inc. |
IC SRAM 8MB PARALLEL 48FPBGA |
![]() |
MD28F010-90Rochester Electronics |
FLASH, 128KX8, 90NS, CDIP32 |
![]() |
MTFC128GAJAEDN-ITMicron Technology |
IC FLASH 1TB MMC 169LFBGA |
![]() |
CG7901AARochester Electronics |
IC SRAM 100TQFP |
![]() |
5962-8866204NARenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28CDIP |
![]() |
MT29F2G16ABAGAWP-AATES:GMicron Technology |
IC FLASH 2G PARALLEL 48TSOP |
![]() |
MD28F020-12/BRochester Electronics |
256K X 8 ETOX FLASH |