English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR4 |
| 内存大小: | 8Gb (1G x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 1.333 GHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 18 ns |
| 电压 - 电源: | 1.14V ~ 1.26V |
| 工作温度: | 0°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 78-TFBGA |
| 供应商设备包: | 78-FBGA (7.5x12) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY62168GN30-45BVXICypress Semiconductor |
MICROPOWER SRAMS |
|
|
7025L20FBRenesas Electronics America |
IC SRAM 128KBIT PAR 84FLATPAK |
|
|
FM24C08ULMT8Rochester Electronics |
IC EEPROM 8KBIT I2C 8TSSOP |
|
|
93425FM/BRochester Electronics |
1K X 1 TTL SRAM |
|
|
W25Q64JWBYIM TRWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 12WLCSP |
|
|
MT53E256M16D1DS-046 WT:B TRMicron Technology |
IC DRAM LPDDR4 WFBGA |
|
|
IS61LPS51218B-200TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100LQFP |
|
|
7024S55FBRenesas Electronics America |
IC SRAM 64KBIT PAR 84FLATPAK |
|
|
DS28E05X-S+TMaxim Integrated |
IC EEPROM 896B 1-WIRE 4WLP |
|
|
FM93C46LZMT8XRochester Electronics |
EEPROM, 64X16, SERIAL, CMOS |
|
|
CY62256NLL-55ZIRochester Electronics |
STANDARD SRAM, 32KX8, 55NS |
|
|
7052S20GRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 108PGA |
|
|
MT25QL02GCBB8E12-0AUT TRMicron Technology |
IC FLSH 2GBIT SPI 133MHZ 24TPBGA |
