English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NAND |
| 内存大小: | 256Gb (32G x 8) |
| 内存接口: | MMC |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | - |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
LE28F4001CTS12-MPB-ERochester Electronics |
IC FLASH 4MBIT PARALLEL 32TSSOP |
|
|
MTFC64GAOAMEA-WT TRMicron Technology |
IC MEM NAND 64GB FLASH 153BGA |
|
|
MT25TL512HBA8ESF-0AATMicron Technology |
IC FLASH 512MBIT SPI 16SOP2 |
|
|
S70GL02GT12FHBV20Cypress Semiconductor |
IC FLSH 2GBIT PARALLEL 64FBGA |
|
|
MD51C67-45/BRochester Electronics |
DUAL MARKED (8413202RA) |
|
|
AT28HC256E-80FMRochester Electronics |
EEPROM, 32KX8, 90NS, PARALLEL |
|
|
MT29F1T08GBLBEJ4:BMicron Technology |
QLC 1T 128GX8 VBGA |
|
|
MT53B384M64D4NK-053 WT:B TRMicron Technology |
IC DRAM 24GBIT 1866MHZ 366WFBGA |
|
|
5962-9166205MXARenesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PGA |
|
|
27S191DM/BRochester Electronics |
27S191DM/B |
|
|
7024L55PFG/S2899Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
|
CY62157ELL-55ZSXEKJRochester Electronics |
ASYNC RAM |
|
|
EDB8164B4PT-1D-F-R TRMicron Technology |
IC DRAM 8GBIT PARALLEL 216FBGA |
