English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 18Mb (1M x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 167 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3.4 ns |
| 电压 - 电源: | 2.375V ~ 2.625V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S29PL064J70BFW072Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 56FBGA |
|
|
5962-8852506UARochester Electronics |
EEPROM, 32KX8, 150NS, PARALLEL |
|
|
MT29VZZZ7D8DQFSL-046 W.9J8Micron Technology |
IC FLASH MEM 536G MCP |
|
|
AS4C512M8D4-75BINAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
|
M5M5256DFP-55XL#SMRochester Electronics |
STANDARD SRAM, 32KX8 |
|
|
CY62128EV30LL-55EKJRochester Electronics |
1-MBIT (128 K X 8) SRAM, 45NS |
|
|
S29GL01GT11TFIV20YRochester Electronics |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
|
CG7792AARochester Electronics |
SPECIAL |
|
|
MTFC32GAKAEEF-AAT TRMicron Technology |
IC FLASH 256GBIT MMC 169TFBGA |
|
|
LE25LB1282TT-TLM-ERochester Electronics |
128KBIT SERIAL SPI EEPROM |
|
|
MT53E2G32D4DT-046 AAT:A TRMicron Technology |
IC DRAM LPDDR4 FBGA |
|
|
CS7568ATRochester Electronics |
USB |
|
|
MT29F2G01ABBGD12-AATES:G TRMicron Technology |
IC FLASH 2GBIT SPI 83MHZ 24TPBGA |
