类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Quad Port, Asynchronous |
内存大小: | 16Kb (2K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 35ns |
访问时间: | 35 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -55°C ~ 125°C (TA) |
安装类型: | Through Hole |
包/箱: | 108-BPGA |
供应商设备包: | 108-PGA (30.48x30.48) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
S98FL01GSDSBHBC13Cypress Semiconductor |
FLASH MEMORY NOR |
![]() |
71256L70TDBRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28CDIP |
![]() |
MTFC8GAMALHT-AATMicron Technology |
IC FLASH 64GBIT MMC |
![]() |
MT29F64G08AECABH1-10Z:A TRMicron Technology |
IC FLASH 64GBIT PARALLEL 100VBGA |
![]() |
CG5147AMRochester Electronics |
SPECIAL |
![]() |
S29PL032J70BFA073Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 56FBGA |
![]() |
MT29F4G08ABBFAH4-AIT:F TRMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
![]() |
S72XS256RE0AHBJ13Cypress Semiconductor |
IC FLASH RAM 256MBIT PAR 133FBGA |
![]() |
S29WS512P0SBFW003Rochester Electronics |
IC FLASH 512MBIT PARALLEL 84FBGA |
![]() |
70V3589S166BFG8Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 208FPBGA |
![]() |
PAL16L8B-4MWRochester Electronics |
ELECTRICALLY ERASABLE PAL DEVIC |
![]() |
CY15B104QSN-108LPXICypress Semiconductor |
IC FRAM 4MBIT SPI/QUAD I/O 8GQFN |
![]() |
5962-8855203XARenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28CDIP |