类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 128Kb (16K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 20ns |
访问时间: | 20 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -55°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 68-Flatpack |
供应商设备包: | 68-FPACK |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
70T3519S166BCGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
FM93CS56LMT8Rochester Electronics |
EEPROM, 128X16, SERIAL, CMOS |
|
7006L45FBRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 68FPACK |
|
TE28F008S3150Rochester Electronics |
FLASH, 1MX8, 150NS, PDSO40 |
|
CG7494AFRochester Electronics |
CG7494AF |
|
NM34C02LMT8XRochester Electronics |
EEPROM, 256X8, SERIAL, CMOS |
|
CY7C185-25SCRochester Electronics |
STANDARD SRAM, 8KX8, 25NS |
|
CY7C1020CV26-15ZSXEKJRochester Electronics |
512-KBIT (32 K 16) STATIC RAM |
|
7005L20GRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 68PGA |
|
MT52L1G32D4PG-107 WT:B TRMicron Technology |
IC DRAM 32GBIT 933MHZ 178FBGA |
|
7006L15JGRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |
|
MT29F512G08EBHBFJ4-T:BMicron Technology |
IC FLSH 512GBIT PARALLEL 132VBGA |
|
MT47H128M8SH-25E IT:M TRMicron Technology |
IC DRAM 1GBIT PARALLEL 60FBGA |