类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Synchronous |
内存大小: | 16Kb (2K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 70ns |
访问时间: | 70 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -55°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-LCC |
供应商设备包: | 48-LCC (14.22x14.22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FM34W02ULMT8Rochester Electronics |
EEPROM, 256X8, SERIAL, CMOS |
|
MT29F512G08EBHBFJ4-T:B TRMicron Technology |
IC FLSH 512GBIT PARALLEL 132VBGA |
|
16-4186-01Cypress Semiconductor |
IC MEM NOR 64FBGA |
|
MT53D512M32D2DS-046 WT:FMicron Technology |
LPDDR4 16G 512MX32 FBGA DDP |
|
MT29F128G08AKCABH2-10ITZ:A TRMicron Technology |
IC FLASH 128GBIT PAR 100TBGA |
|
SM661GE8-ACSSilicon Motion |
FERRI-EMMC BGA 100-B EMMC 4.5 ML |
|
CG7668AARochester Electronics |
SPECIAL |
|
5962-8700203UARenesas Electronics America |
IC SRAM 16KBIT PARALLEL 48LCC |
|
SMJ64C16S-55JDMRochester Electronics |
STANDARD SRAM, 16KX1 |
|
MTFC32GAPALGT-AATMicron Technology |
IC FLASH 256GBIT MMC |
|
MT29F4T08CTHBBM5-3R:B TRMicron Technology |
IC FLASH 4TB PARALLEL 333MHZ |
|
MT29F64G08CBCBBH1-10X:BMicron Technology |
IC FLASH 64GBIT PARALLEL 100VBGA |
|
CG6716AMRochester Electronics |
SPECIAL |