| 类型 | 描述 | 
|---|---|
| 系列: | FL-L | 
| 包裹: | Tape & Reel (TR) | 
| 零件状态: | Active | 
| 内存类型: | Non-Volatile | 
| 内存格式: | FLASH | 
| 技术: | FLASH - NOR | 
| 内存大小: | 64Mb (8M x 8) | 
| 内存接口: | SPI - Quad I/O, QPI | 
| 时钟频率: | 108 MHz | 
| 写周期时间 - 字,页: | - | 
| 访问时间: | - | 
| 电压 - 电源: | 2.7V ~ 3.6V | 
| 工作温度: | -40°C ~ 125°C (TA) | 
| 安装类型: | Surface Mount | 
| 包/箱: | 8-UDFN Exposed Pad | 
| 供应商设备包: | 8-USON (4x4) | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | 16-4072-01ACypress Semiconductor | IC MEM NOR 56TSOP | 
|   | IS66WVE4M16EBLL-70BLI-TRISSI (Integrated Silicon Solution, Inc.) | IC PSRAM 64MBIT PARALLEL 48TFBGA | 
|   | MT29RZ4C4DZZMGGM-18W.80CMicron Technology | IC FLASH RAM 4G PARALLEL 533MHZ | 
|   | CG5183ATRochester Electronics | SPECIAL | 
|   | CAT25080VGE-26773Rochester Electronics | IC EEPROM 8KBIT SPI 20MHZ 8SOIC | 
|   | 5962-8700211ZARenesas Electronics America | IC SRAM 16KBIT PARALLEL SB48 | 
|   | MT44K16M36RB-093E:BMicron Technology | IC DRAM 576MBIT PARALLEL 168BGA | 
|   | FM93C66ALZEMT8Rochester Electronics | EEPROM, 256X16, SERIAL, CMOS | 
|   | M5M5V216ATP-55HIDTRochester Electronics | 512K X8, SRAM | 
|   | CG7721AATRochester Electronics | SPECIAL | 
|   | MT53E768M64D4SQ-046 WT:A TRMicron Technology | IC DRAM LPDDR4 FBGA | 
|   | M10042040054X0ISAYRenesas Electronics America | IC RAM 4MBIT 54MHZ 8SOIC | 
|   | M5M5256DFP-55LL#SMRochester Electronics | STANDARD SRAM, 32KX8 |