English
简体中文
CRYSTAL 32.0000MHZ 18PF SMD
XTAL OSC VCXO 163.8400MHZ HCSL
RF ATTENUATOR 4DB 50OHM 2.92MM
IC FLSH 1GBIT SPI/QUAD I/O 24BGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | FL-S |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 1Gb (128M x 8) |
| 内存接口: | SPI - Quad I/O |
| 时钟频率: | 80 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 105°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 24-TBGA |
| 供应商设备包: | 24-BGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
CAT24C32WGI-26758Rochester Electronics |
IC EEPROM 32KBIT I2C 1MHZ 8SOIC |
|
|
R1EX24512BSAS0I#S1Rochester Electronics |
EEPROM, 64KX8, SERIAL |
|
|
CY7C09349AV-12AXCKJRochester Electronics |
DUAL PORT RAM |
|
|
MT53E2DDDS-DCMicron Technology |
LPDDR4 0 WFBGA DDP |
|
|
R1RP0401DGE-2PR#B0Rochester Electronics |
4M ASYNCHRONOUS SRAM |
|
|
6116LA25TBDRochester Electronics |
SRAM 16K (2K X 8-BIT) |
|
|
MT52L256M64D2QA-125 XT:B TRMicron Technology |
IC DRAM LPDDR3 16G FBGA |
|
|
IS62WV102416FBLL-45BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
|
MT62F1G64D8CH-036 WT:A TRMicron Technology |
IC FLASH 64GBIT 2.75GHZ |
|
|
CG8002AARochester Electronics |
SPECIAL |
|
|
70T3319S133BFGIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 208FPBGA |
|
|
CAT24S128C4UTRRochester Electronics |
IC EEPROM 128K I2C 1MHZ 4WLCSP |
|
|
IS25WP016D-JULE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 16MB QSPI 8USON |