类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Synchronous |
内存大小: | 32Kb (2K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 55ns |
访问时间: | 55 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -55°C ~ 125°C (TA) |
安装类型: | Through Hole |
包/箱: | 68-BPGA |
供应商设备包: | 68-PGA (29.46x29.46) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT40A1G8SA-062E:EMicron Technology |
IC DRAM 8GBIT PARALLEL 78FBGA |
|
27S21PCRochester Electronics |
OTP ROM, 256X4, 60NS, TTL |
|
CY7C1372D-167AXCKJRochester Electronics |
ZBT SRAM |
|
MTFC32GAKAEDQ-AAT TRMicron Technology |
IC FLASH 256GBIT MMC 100LBGA |
|
5962-8700204UARenesas Electronics America |
IC SRAM 16KBIT PARALLEL 48LCC |
|
M30082040054X0ISARRenesas Electronics America |
IC RAM 8MBIT 54MHZ 8SOIC |
|
S25FL256LAGBHA023Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
5962-9166204MXARenesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PGA |
|
S29CD016J0PQFM110Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 80PQFP |
|
MT40A512M8SA-062E AAT:FMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
CAT93C46SI-26526Rochester Electronics |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
CAT93C56VGI-1.8Rochester Electronics |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
GVT7164B19C-12Rochester Electronics |
STANDARD SRAM, 64KX18, 12NS |