类型 | 描述 |
---|---|
系列: | e•MMC™ |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND |
内存大小: | 256Gb (32G x 8) |
内存接口: | MMC |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 169-TFBGA |
供应商设备包: | 169-TFBGA (14x18) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT29F128G08AKCABH2-10Z:A TRMicron Technology |
IC FLASH 128GBIT PAR 100TBGA |
|
S29GL064N11WEI049Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL WAFER |
|
GD25LE64CLIGRGigaDevice |
IC FLASH 64MBIT SPI/QUAD 21WLCSP |
|
AT45DQ161-CCUF-TAdesto Technologies |
IC FLASH 16MBIT SPI/QUAD 9UBGA |
|
HN58V65AFPI10ERochester Electronics |
64K EEPROM (8KWORD X 8-BIT) |
|
PC28F064M29EWBAFlip Electronics |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
MT51K256M32HF-60 N:B TRMicron Technology |
IC RAM 8GBIT PARALLEL 1.5GHZ |
|
7006L25GBRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PGA |
|
SM662PXD-BDSTSilicon Motion |
FERRI-EMMC BGA 153-B EMMC 3D TLC |
|
JM38510/23106BEARochester Electronics |
STATIC RAM, 1K X 1, WITH 3 STATE |
|
S29GL128S11DHBV10Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
MD2114/BVARochester Electronics |
DUAL MARKED (M38510/23802BVA) |
|
70V09L20PFGIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |