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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | - |
| 内存格式: | - |
| 技术: | - |
| 内存大小: | - |
| 内存接口: | - |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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CAT24C512C8UTRSanyo Semiconductor/ON Semiconductor |
IC EEPROM 512KBIT I2C 8WLCSP |
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48LM01T-I/SMRoving Networks / Microchip Technology |
IC EERAM 1MBIT SPI 66MHZ 8SOIJ |
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MT53E128M16D1DS-046 WT:A TRMicron Technology |
IC DRAM LPDDR4 WFBGA |
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MT52L768M32D3PU-107 WT:B TRMicron Technology |
IC DRAM 24GBIT 933MHZ 168FBGA |
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SM662GXD-BDSTSilicon Motion |
FERRI-EMMC BGA 100-B EMMC 3D TLC |
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S29VS128RABBHI000ARochester Electronics |
PARALLEL NOR FLASH, 1.8V, 128MB |
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S29VS064RABBHW013Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 44FBGA |
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MT53E2D1BCY-DCMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
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6116SA20TDBRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24CDIP |
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W972GG8KS25I TRWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 60WBGA |
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MT29F128G08AKCABH2-10ITZ:AMicron Technology |
IC FLASH 128GBIT PAR 100TBGA |
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AM27S181A/BUARochester Electronics |
AM27S181 - OTP ROM, 1KX8, 50NS |
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MD28F020-12/RRochester Electronics |
MD28F020-12/R |
