类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Synchronous |
内存大小: | 1Mb (64K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 7.5 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
GD25S512MDBIGYGigaDevice |
IC FLSH 512MBIT SPI/QUAD 24TFBGA |
![]() |
AT25160AN-SQ27T6Rochester Electronics |
AT25160 - EEPROM, 2KX8, SERIAL |
![]() |
STK14EC8-BF25Rochester Electronics |
NON-VOLATILE SRAM, 512KX8, 25NS |
![]() |
SM661GE4-ACSilicon Motion |
FERRI-EMMC BGA 100-B EMMC 4.5 ML |
![]() |
7052S35GRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 108PGA |
![]() |
ER2810HRDRochester Electronics |
8K ELECTRICALLY ALTERABLE ROM |
![]() |
MD27C256-15/BRochester Electronics |
MD27C256-15/B |
![]() |
70T3519S133BFGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 208FPBGA |
![]() |
70V7339S166BFG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 208FPBGA |
![]() |
MT43A4G40200NFA-S15:AMicron Technology |
HMC 16G NANA HBBGA QDP |
![]() |
CG7711AARochester Electronics |
SPECIAL |
![]() |
R1EX24064ATAS0A#RSRochester Electronics |
EEPROM, 8KX8, SERIAL |
![]() |
MT53E128M16D1DS-046 AAT:A TRMicron Technology |
IC DRAM LPDDR4 WFBGA |