English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | - |
| 内存格式: | - |
| 技术: | - |
| 内存大小: | - |
| 内存接口: | - |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
M10042040108X0ISARRenesas Electronics America |
IC RAM 4MBIT SPI 108MHZ 8SOIC |
|
|
7025S55GRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PGA |
|
|
CG5195AFRochester Electronics |
CG5195AF |
|
|
R1RW0404DGE-2PR#B0Rochester Electronics |
4M HIGH SPEED SRAM (1M X 4-BIT) |
|
|
MT53E2D1ACY-DCMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
|
|
CY62157DV20L-5BVIRochester Electronics |
STANDARD SRAM, 512KX16, 55NS |
|
|
R1WV6416RBG-7SI#B0Rochester Electronics |
IC SRAM 64MBIT PARALLEL 48TFBGA |
|
|
MT29F2G08ABBGAM79A3WC1LMicron Technology |
IC FLASH NAND 2G 256MX8 DIE |
|
|
EDB8164B4PT-1DAT-F-DMicron Technology |
IC DRAM 8GBIT PARALLEL 216FBGA |
|
|
MT29F8G01ADAFD12-IT:F TRMicron Technology |
IC FLASH 8GBIT SPI 83MHZ 24TPBGA |
|
|
CG7049ATRochester Electronics |
SPECIAL |
|
|
CS7336AATRochester Electronics |
CAPSENSE |
|
|
MT53E512M32D2NP-046 WT:F TRMicron Technology |
LPDDR4 16G 512MX32 FBGA DDP |
