English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, QDR II+ |
| 内存大小: | 72Mb (4M x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 250 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | -55°C ~ 125°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 165-BFCCGA |
| 供应商设备包: | 165-CCGA (21x25) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
5962-8700212ZARenesas Electronics America |
IC SRAM 16KBIT PARALLEL SB48 |
|
|
MT53E512M64D4NW-053 WT:E TRMicron Technology |
LPDDR4 32G 512MX64 FBGA WT QDP |
|
|
HD63310RP20Rochester Electronics |
MULTI-PORT SRAM, 1KX8, 200NS |
|
|
5962-8687505YARenesas Electronics America |
IC SRAM 8KBIT PARALLEL 48LCC |
|
|
R1LP0408CSB-5UC#D0Rochester Electronics |
STANDARD SRAM, 512KX8, 55NS |
|
|
0000006K3041Rochester Electronics |
4MB SRAM PBGA 128KX36 |
|
|
5962-8861011UARenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68FPACK |
|
|
MD2114A-5/BRochester Electronics |
1K X 4 SRAM |
|
|
GS8642Z72GC-250IGSI Technology |
IC SRAM 72MBIT PARALLEL 209BGA |
|
|
M30042040054X0PSAYRenesas Electronics America |
IC RAM 4MBIT 54MHZ 8SOIC |
|
|
AT25320AN-SQ27EIRochester Electronics |
AT25320 - EEPROM, 4KX8, SERIAL |
|
|
LE25FW806TT-A-TLM-HRochester Electronics |
8M BIT(1M X 8) SERIAL FLASH MEMO |
|
|
MX69V28F64MBXLWMacronix |
IC FLASH RAM 128MBIT PAR 108MHZ |
