类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Synchronous |
内存大小: | 1.125Mb (32K x 36) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 4.2 ns |
电压 - 电源: | 3.15V ~ 3.45V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 208-BFQFP |
供应商设备包: | 208-PQFP (28x28) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT25256AN-SQ27ALRochester Electronics |
AT25256 - EEPROM, 32KX8, SERIAL |
|
MT53E4D1AHJ-DCMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
|
MT29F4T08EUHAFM4-3T:A TRMicron Technology |
IC FLASH 4TB PARALLEL 333MHZ |
|
SM662GEB-ACSSilicon Motion |
FERRI-EMMC BGA 100-B EMMC 5.0 ML |
|
S25FS064SAGBHV020ARochester Electronics |
SERIAL FLASH, 1.8V, 64MB |
|
7025L35GBRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PGA |
|
MT29F2G08ABBGAH4-AATES:GMicron Technology |
IC FLASH 2GBIT PARALLEL 63VFBGA |
|
70T3539MS133BCGIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 256CABGA |
|
SM661PE4-ACSilicon Motion |
FERRI-EMMC BGA 153-B EMMC 4.5 ML |
|
EDB8164B4PT-1D-F-DMicron Technology |
IC DRAM 8GBIT PARALLEL 216FBGA |
|
CAT24C02TDE-GT3ARochester Electronics |
IC EEPROM 2KBIT I2C TSOT23-5 |
|
MT40A1G16KD-062E:E TRMicron Technology |
IC FLASH 16GBIT PARALLEL 96FBGA |
|
SM662GEA-ACSilicon Motion |
FERRI-EMMC BGA 100-B EMMC 5.0 ML |