English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 16Kb (2K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 45ns |
| 访问时间: | 45 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -55°C ~ 125°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 24-CDIP (0.300", 7.62mm) |
| 供应商设备包: | 24-CDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
70V659S12BCGIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
|
CAT25160ZD2GIRochester Electronics |
IC EEPROM 16KBIT SPI 10MHZ 8MSOP |
|
|
CG7144AARochester Electronics |
SPECIAL |
|
|
CAT93C76VGIRochester Electronics |
IC EEPROM 8KBIT SPI 3MHZ 8SOIC |
|
|
GD25LE32DLIGRGigaDevice |
IC FLASH 32MBIT SPI/QUAD 21WLCSP |
|
|
CG7837AARochester Electronics |
SPECIAL |
|
|
MT53D256M64D4NY-046 XT:B TRMicron Technology |
IC DRAM 16GBIT 2133MHZ |
|
|
CAT25AM02C8ATRSanyo Semiconductor/ON Semiconductor |
IC EEPROM 2MBIT SPI 5MHZ 8WLCSP |
|
|
CAT24C01ZGIRochester Electronics |
IC EEPROM 1KBIT I2C 400KHZ 8MSOP |
|
|
CG8775AFTCypress Semiconductor |
IC MEM F-RAM SERIAL 8SOP |
|
|
CG5942ATTRochester Electronics |
SPECIAL |
|
|
EDBA164B2PR-1D-F-DMicron Technology |
IC DRAM 16GBIT PARALLEL 216FBGA |
|
|
MX25U25635FBBI-10GMacronix |
IC FLSH 256MBIT SPI/QUAD 31WLCSP |
